IRF5210PBF vs IRFS7530TRLPBF Comparación
Comparación detallada lado a lado de IRF5210PBF por Infineon y IRFS7530TRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF5210PBF | IRFS7530TRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $1,72 |
| Tipo de transistor | P-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | -100 V | — |
| Continuous Drain Current (Id) at Tc | -40 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-Source Threshold Voltage (Vgs(th)) | -2 V to -4 V (typical -2 V) | — |
| On-Resistance Rds(on) at Vgs=-10V | 60 milliohms | — |
| Total Gate Charge (Qg) | 120 nC | — |
| Power Dissipation (Pd) at Tc | 200 W | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C (junction) | -55 °C to +175 °C (Tj) |
| Encapsulado | TO-220AB (through-hole) | — |
| Tipo de montaje | Through Hole | Surface Mount |
| Technology | HEXFET (Fifth Generation) | StrongIRFET™ (N-Channel Trench MOSFET) |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | Yes (PBF suffix) |
| Tab Connection | Electrically tied to Drain | — |
| Pin Configuration | Gate / Drain (tab) / Source (G-D-S, front view) | 3-Pin (Gate, Drain tab, Source) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFS7530TRLPBF |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 195 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max @ VGS=10V | — | 2 mΩ |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge Qg Typ | — | [DATA_NEEDED: typical gate charge] |
| Total Power Dissipation (PD) at Tc=25°C | — | 375 W |
| Encapsulado / Carcasa | — | PG-TO263-2 (D2PAK, TO-263) |
| Packaging | — | Tape & Reel (TR) |
| Series | — | StrongIRFET™ |