IRFR5305TRLPBF vs IRFR5410TRRPBF Comparación
Comparación detallada lado a lado de IRFR5305TRLPBF por Infineon y IRFR5410TRRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR5305TRLPBF | IRFR5410TRRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,38 | $0,49 |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc=25C | -31 A | -13 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=-10V | 65 mΩ | 205 mΩ |
| RDS(on) max at VGS=-5V | [DATA_NEEDED: RDS(on) at VGS=-5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | -55C to +150C |
| Encapsulado | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | HEXFET fifth-generation planar MOSFET | HEXFET (5th Generation) |
| Avalanche Rated | Yes (fully avalanche rated) | Yes |
| Lead-Free / RoHS | Yes (Pb-free, suffix "PBF") | Yes (PBF suffix indicates lead-free) |
| Tape & Reel Orientation | Left orientation (TRLPBF = Tape & Reel, Left) | — |
| Polarity | — | P-Channel |
| FET Type | — | MOSFET (Metal Oxide Semiconductor) |
| VDS (Drain-Source Voltage) | — | -100 V |
| VGS (Gate-Source Voltage) | — | ±20 V |
| VGS(th) (Gate Threshold) | — | -2 V to -4 V |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at 100C] |
| RDS(on) typical at VGS=-10V | — | 26 mΩ (per Mouser listing for IRFR5410TRPBF) |
| Total Gate Charge (Qg) | — | 70 nC |
| Power Dissipation (Pd) at Tc=25C | — | 66 W |