IRFR5305TRLPBF vs IRFR5410TRRPBF 对比

详细并排对比 IRFR5305TRLPBF 出自 Infineon 和 IRFR5410TRRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR5410TRRPBF IRFR5410TRRPBF - P-CH 100V 13A HEXFET MOSFET | Infineon

IRFR5410TRRPBF - P-CH 100V 13A HEXFET MOSFET | Infineon

IRFR5410TRRPBF ✓ 量产中

规格对比

参数 IRFR5305TRLPBF IRFR5410TRRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.38 $0.49
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -31 A -13 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=-10V 65 mΩ 205 mΩ
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Power Dissipation (PD) at Tc=25C 110 W —
工作结温 -55C to +175C -55C to +150C
封装 TO-252AA (DPAK), surface mount TO-252AA (DPAK)
安装类型 Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET HEXFET (5th Generation)
Avalanche Rated Yes (fully avalanche rated) Yes
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") Yes (PBF suffix indicates lead-free)
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
Polarity — P-Channel
FET Type — MOSFET (Metal Oxide Semiconductor)
VDS (Drain-Source Voltage) — -100 V
VGS (Gate-Source Voltage) — ±20 V
VGS(th) (Gate Threshold) — -2 V to -4 V
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at 100C]
RDS(on) typical at VGS=-10V — 26 mΩ (per Mouser listing for IRFR5410TRPBF)
Total Gate Charge (Qg) — 70 nC
Power Dissipation (Pd) at Tc=25C — 66 W

数据手册与资源

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