IRFR5305TRLPBF vs IRFR5410TRRPBF Comparaison
Comparaison détaillée côte à côte de IRFR5305TRLPBF par Infineon et IRFR5410TRRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFR5305TRLPBF | IRFR5410TRRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,38 | $0,49 |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc=25C | -31 A | -13 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=-10V | 65 mΩ | 205 mΩ |
| RDS(on) max at VGS=-5V | [DATA_NEEDED: RDS(on) at VGS=-5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Température de jonction en fonctionnement | -55C to +175C | -55C to +150C |
| Boîtier | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Type de montage | Surface Mount | Surface Mount |
| Technology | HEXFET fifth-generation planar MOSFET | HEXFET (5th Generation) |
| Avalanche Rated | Yes (fully avalanche rated) | Yes |
| Lead-Free / RoHS | Yes (Pb-free, suffix "PBF") | Yes (PBF suffix indicates lead-free) |
| Tape & Reel Orientation | Left orientation (TRLPBF = Tape & Reel, Left) | — |
| Polarity | — | P-Channel |
| FET Type | — | MOSFET (Metal Oxide Semiconductor) |
| VDS (Drain-Source Voltage) | — | -100 V |
| VGS (Gate-Source Voltage) | — | ±20 V |
| VGS(th) (Gate Threshold) | — | -2 V to -4 V |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at 100C] |
| RDS(on) typical at VGS=-10V | — | 26 mΩ (per Mouser listing for IRFR5410TRPBF) |
| Total Gate Charge (Qg) | — | 70 nC |
| Power Dissipation (Pd) at Tc=25C | — | 66 W |