IRFS4321TRLPBF vs IRFS4321TRRPBF Comparación
Comparación detallada lado a lado de IRFS4321TRLPBF por Infineon y IRFS4321TRRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFS4321TRLPBF | IRFS4321TRRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,73 | $2,97 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID) at Tc=25C | 85 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) Max at VGS=10V | 15 mOhm | — |
| RDS(on) Max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) Typ | 71 nC | — |
| Total Gate Charge (Qg) Max | 110 nC | — |
| Power Dissipation (PD) at Tc=25C | 350 W | — |
| Thermal Resistance Junction-to-Case (RθJC) Max | 0.45 C/W | — |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | 0.65 C/W (after 1000 cycles -55C to +150C) | — |
| Temperatura de unión de funcionamiento | -55C to +175C | -55C to +175C |
| Encapsulado | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK (TO-263), 3-pin (2+Tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | IR HEXFET (IR MOSFET) | HEXFET (IR MOSFET) |
| Estado RoHS | Compliant | — |
| Continuous Drain Current (ID) at 25C | — | 85 A (Tc) |
| Continuous Drain Current (ID) at 100C | — | [DATA_NEEDED: ID at 100C] |
| RDS(on) Maximum at VGS=10V | — | 15 mOhm |
| Total Gate Charge (Qg) | — | 71 nC |
| Gate-to-Source Voltage Maximum | — | +/- 30 V |
| Power Dissipation (PD) | — | 350 W (Tc) |
| Thermal Resistance Junction-to-Case (RthJC) | — | 0.65 C/W (end of life, D2PAK) |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | [DATA_NEEDED: RthJA] |
| Avalanche Energy Rating | — | Single-pulse avalanche rated (per datasheet) |
| Lead-Free / RoHS Status | — | Lead-Free (PBF suffix), RoHS Compliant |
| Nivel MSL | — | [DATA_NEEDED: MSL Level] |