IRFS4321TRLPBF vs IRFS4321TRRPBF 비교

다음의 상세 나란히 비교: IRFS4321TRLPBF 제조: Infineon 및 IRFS4321TRRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFS4321TRLPBF IRFS4321TRRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.73 $2.97
FET Type N-Channel MOSFET, Metal Oxide N-Channel MOSFET
Drain-to-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at Tc=25C 85 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) Max at VGS=10V 15 mOhm —
RDS(on) Max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-to-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) Typ 71 nC —
Total Gate Charge (Qg) Max 110 nC —
Power Dissipation (PD) at Tc=25C 350 W —
Thermal Resistance Junction-to-Case (RθJC) Max 0.45 C/W —
Thermal Resistance Junction-to-Case (RθJC) End-of-Life 0.65 C/W (after 1000 cycles -55C to +150C) —
동작 접합 온도 -55C to +175C -55C to +175C
패키지 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB D2PAK (TO-263), 3-pin (2+Tab)
실장 유형 Surface Mount Surface Mount
Technology IR HEXFET (IR MOSFET) HEXFET (IR MOSFET)
RoHS 상태 Compliant —
Continuous Drain Current (ID) at 25C — 85 A (Tc)
Continuous Drain Current (ID) at 100C — [DATA_NEEDED: ID at 100C]
RDS(on) Maximum at VGS=10V — 15 mOhm
Total Gate Charge (Qg) — 71 nC
Gate-to-Source Voltage Maximum — +/- 30 V
Power Dissipation (PD) — 350 W (Tc)
Thermal Resistance Junction-to-Case (RthJC) — 0.65 C/W (end of life, D2PAK)
Thermal Resistance Junction-to-Ambient (RthJA) — [DATA_NEEDED: RthJA]
Avalanche Energy Rating — Single-pulse avalanche rated (per datasheet)
Lead-Free / RoHS Status — Lead-Free (PBF suffix), RoHS Compliant
MSL 레벨 — [DATA_NEEDED: MSL Level]

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