IRFS4321TRLPBF vs IRFS4321TRRPBF Comparaison
Comparaison détaillée côte à côte de IRFS4321TRLPBF par Infineon et IRFS4321TRRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFS4321TRLPBF | IRFS4321TRRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,73 | $2,97 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID) at Tc=25C | 85 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) Max at VGS=10V | 15 mOhm | — |
| RDS(on) Max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) Typ | 71 nC | — |
| Total Gate Charge (Qg) Max | 110 nC | — |
| Power Dissipation (PD) at Tc=25C | 350 W | — |
| Thermal Resistance Junction-to-Case (RθJC) Max | 0.45 C/W | — |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | 0.65 C/W (after 1000 cycles -55C to +150C) | — |
| Température de jonction en fonctionnement | -55C to +175C | -55C to +175C |
| Boîtier | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK (TO-263), 3-pin (2+Tab) |
| Type de montage | Surface Mount | Surface Mount |
| Technology | IR HEXFET (IR MOSFET) | HEXFET (IR MOSFET) |
| Statut RoHS | Compliant | — |
| Continuous Drain Current (ID) at 25C | — | 85 A (Tc) |
| Continuous Drain Current (ID) at 100C | — | [DATA_NEEDED: ID at 100C] |
| RDS(on) Maximum at VGS=10V | — | 15 mOhm |
| Total Gate Charge (Qg) | — | 71 nC |
| Gate-to-Source Voltage Maximum | — | +/- 30 V |
| Power Dissipation (PD) | — | 350 W (Tc) |
| Thermal Resistance Junction-to-Case (RthJC) | — | 0.65 C/W (end of life, D2PAK) |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | [DATA_NEEDED: RthJA] |
| Avalanche Energy Rating | — | Single-pulse avalanche rated (per datasheet) |
| Lead-Free / RoHS Status | — | Lead-Free (PBF suffix), RoHS Compliant |
| Niveau MSL | — | [DATA_NEEDED: MSL Level] |