IRFS4321TRLPBF vs IRFS4321TRRPBF 对比

详细并排对比 IRFS4321TRLPBF 出自 Infineon 和 IRFS4321TRRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFS4321TRRPBF IRFS4321TRRPBF - 150V 83A N-Channel HEXFET MOSFET | Infineon

IRFS4321TRRPBF - 150V 83A N-Channel HEXFET MOSFET | Infineon

IRFS4321TRRPBF ✓ 量产中

规格对比

参数 IRFS4321TRLPBF IRFS4321TRRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.73 $2.97
FET Type N-Channel MOSFET, Metal Oxide N-Channel MOSFET
Drain-to-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at Tc=25C 85 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) Max at VGS=10V 15 mOhm —
RDS(on) Max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-to-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) Typ 71 nC —
Total Gate Charge (Qg) Max 110 nC —
Power Dissipation (PD) at Tc=25C 350 W —
Thermal Resistance Junction-to-Case (RθJC) Max 0.45 C/W —
Thermal Resistance Junction-to-Case (RθJC) End-of-Life 0.65 C/W (after 1000 cycles -55C to +150C) —
工作结温 -55C to +175C -55C to +175C
封装 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB D2PAK (TO-263), 3-pin (2+Tab)
安装类型 Surface Mount Surface Mount
Technology IR HEXFET (IR MOSFET) HEXFET (IR MOSFET)
RoHS 状态 Compliant —
Continuous Drain Current (ID) at 25C — 85 A (Tc)
Continuous Drain Current (ID) at 100C — [DATA_NEEDED: ID at 100C]
RDS(on) Maximum at VGS=10V — 15 mOhm
Total Gate Charge (Qg) — 71 nC
Gate-to-Source Voltage Maximum — +/- 30 V
Power Dissipation (PD) — 350 W (Tc)
Thermal Resistance Junction-to-Case (RthJC) — 0.65 C/W (end of life, D2PAK)
Thermal Resistance Junction-to-Ambient (RthJA) — [DATA_NEEDED: RthJA]
Avalanche Energy Rating — Single-pulse avalanche rated (per datasheet)
Lead-Free / RoHS Status — Lead-Free (PBF suffix), RoHS Compliant
MSL 等级 — [DATA_NEEDED: MSL Level]

数据手册与资源

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