IRLB8721 vs IRLB8748PBF Comparación
Comparación detallada lado a lado de IRLB8721 por Infineon y IRLB8748PBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLB8721 | IRLB8748PBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,68 |
| Drain-Source Voltage | 30 V maximum | — |
| Continuous Drain Current | 62 A at Tc | — |
| Drain-Source On-State Resistance | 8.7 mOhm maximum | — |
| Power Dissipation | 65 W at Tc | — |
| Tensión puerta-fuente | +/-20 V maximum | — |
| Carga total de puerta | 7.6 nC | — |
| Channel Type | N-channel | N-Channel |
| Technology | StrongIRFET | — |
| Gate Drive Optimization | 5 V logic-level optimized | — |
| Encapsulado | TO-220AB through-hole package | — |
| Tipo de montaje | Through-hole | Through Hole |
| Device Classification | Power MOSFET | — |
| Qualification | JEDEC product qualification according to the supplied cross-reference data | — |
| Related Ordering Code | IRLB8721PBF | — |
| Manufacturer | Infineon Technologies | — |
| Manufacturer Product Page | Infineon IRLB8721 | — |
| Maximum Drain Current Condition | Tc | — |
| Power Dissipation Condition | Tc | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TC=25C | — | 92 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.8 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | 15 nC typical |
| Power Dissipation (PD) at TC=25C | — | 75 W |
| Rango de temperatura de funcionamiento | — | -55C to +175C (junction) |
| Package Type | — | TO-220AB through-hole |
| Technology Family | — | StrongIRFET / HEXFET |
| Logic-Level Gate Drive | — | Yes (optimized for 5V VGS) |
| Estado RoHS | — | Compliant (Pb-free PBF suffix) |
| Qualification Standard | — | JEDEC (Industrial market per datasheet) |