IRLB8721 vs IRLB8748PBF Comparaison
Comparaison détaillée côte à côte de IRLB8721 par Infineon et IRLB8748PBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRLB8721 | IRLB8748PBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,68 |
| Drain-Source Voltage | 30 V maximum | — |
| Continuous Drain Current | 62 A at Tc | — |
| Drain-Source On-State Resistance | 8.7 mOhm maximum | — |
| Power Dissipation | 65 W at Tc | — |
| Tension grille-source | +/-20 V maximum | — |
| Charge de grille totale | 7.6 nC | — |
| Channel Type | N-channel | N-Channel |
| Technology | StrongIRFET | — |
| Gate Drive Optimization | 5 V logic-level optimized | — |
| Boîtier | TO-220AB through-hole package | — |
| Type de montage | Through-hole | Through Hole |
| Device Classification | Power MOSFET | — |
| Qualification | JEDEC product qualification according to the supplied cross-reference data | — |
| Related Ordering Code | IRLB8721PBF | — |
| Manufacturer | Infineon Technologies | — |
| Manufacturer Product Page | Infineon IRLB8721 | — |
| Maximum Drain Current Condition | Tc | — |
| Power Dissipation Condition | Tc | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TC=25C | — | 92 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.8 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | 15 nC typical |
| Power Dissipation (PD) at TC=25C | — | 75 W |
| Plage de température de fonctionnement | — | -55C to +175C (junction) |
| Package Type | — | TO-220AB through-hole |
| Technology Family | — | StrongIRFET / HEXFET |
| Logic-Level Gate Drive | — | Yes (optimized for 5V VGS) |
| Statut RoHS | — | Compliant (Pb-free PBF suffix) |
| Qualification Standard | — | JEDEC (Industrial market per datasheet) |