IRLB8721 vs IRLB8748PBF 비교

다음의 상세 나란히 비교: IRLB8721 제조: Infineon 및 IRLB8748PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IRLB8721 IRLB8721 - 30V 62A 8.7mOhm MOSFET | Infineon

IRLB8721 - 30V 62A 8.7mOhm MOSFET | Infineon

IRLB8721 ✓ 활성

사양 비교

파라미터 IRLB8721 IRLB8748PBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.00 $0.68
Drain-Source Voltage 30 V maximum —
Continuous Drain Current 62 A at Tc —
Drain-Source On-State Resistance 8.7 mOhm maximum —
Power Dissipation 65 W at Tc —
게이트-소스 전압 +/-20 V maximum —
총 게이트 전하 7.6 nC —
Channel Type N-channel N-Channel
Technology StrongIRFET —
Gate Drive Optimization 5 V logic-level optimized —
패키지 TO-220AB through-hole package —
실장 유형 Through-hole Through Hole
Device Classification Power MOSFET —
Qualification JEDEC product qualification according to the supplied cross-reference data —
Related Ordering Code IRLB8721PBF —
Manufacturer Infineon Technologies —
Manufacturer Product Page Infineon IRLB8721 —
Maximum Drain Current Condition Tc —
Power Dissipation Condition Tc —
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TC=25C — 92 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance RDS(on) max at VGS=10V — 4.8 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — 15 nC typical
Power Dissipation (PD) at TC=25C — 75 W
동작 온도 범위 — -55C to +175C (junction)
Package Type — TO-220AB through-hole
Technology Family — StrongIRFET / HEXFET
Logic-Level Gate Drive — Yes (optimized for 5V VGS)
RoHS 상태 — Compliant (Pb-free PBF suffix)
Qualification Standard — JEDEC (Industrial market per datasheet)

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