IRLB8721 vs IRLB8748PBF 对比
详细并排对比 IRLB8721 出自 Infineon 和 IRLB8748PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLB8721 | IRLB8748PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $0.68 |
| Drain-Source Voltage | 30 V maximum | — |
| Continuous Drain Current | 62 A at Tc | — |
| Drain-Source On-State Resistance | 8.7 mOhm maximum | — |
| Power Dissipation | 65 W at Tc | — |
| 栅源电压 | +/-20 V maximum | — |
| 总栅极电荷 | 7.6 nC | — |
| Channel Type | N-channel | N-Channel |
| Technology | StrongIRFET | — |
| Gate Drive Optimization | 5 V logic-level optimized | — |
| 封装 | TO-220AB through-hole package | — |
| 安装类型 | Through-hole | Through Hole |
| Device Classification | Power MOSFET | — |
| Qualification | JEDEC product qualification according to the supplied cross-reference data | — |
| Related Ordering Code | IRLB8721PBF | — |
| Manufacturer | Infineon Technologies | — |
| Manufacturer Product Page | Infineon IRLB8721 | — |
| Maximum Drain Current Condition | Tc | — |
| Power Dissipation Condition | Tc | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TC=25C | — | 92 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.8 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | 15 nC typical |
| Power Dissipation (PD) at TC=25C | — | 75 W |
| 工作温度范围 | — | -55C to +175C (junction) |
| Package Type | — | TO-220AB through-hole |
| Technology Family | — | StrongIRFET / HEXFET |
| Logic-Level Gate Drive | — | Yes (optimized for 5V VGS) |
| RoHS 状态 | — | Compliant (Pb-free PBF suffix) |
| Qualification Standard | — | JEDEC (Industrial market per datasheet) |