IRLML2803TRPBF vs IRLML6246TRPBF Comparación
Comparación detallada lado a lado de IRLML2803TRPBF por Infineon y IRLML6246TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLML2803TRPBF | IRLML6246TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,13 | $0,11 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLML2803TRPBF | IRLML6246TRPBF |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | IR MOSFET Generation V | IR MOSFET (HEXFET Power MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | — |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge (Qg) | 3.3 nC typical | — |
| Power Dissipation (PD) at TA=25C | 540 mW | — |
| Encapsulado | Micro3 / SOT-23 (3-pin) | SOT-23 (Micro3) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +150C (TJ) | -55C to +150C (junction) |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) | — |
| Nivel MSL | 1 | MSL1 (per JEDEC J-STD-020) |
| RoHS Compliance | Compliant, Halogen-Free | Yes (Pb-free) |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 20 V |
| Continuous Drain Current (ID) at Ta=25C | — | 4.1 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | 46 mOhm |
| On-Resistance RDS(on) max @ VGS=2.5V | — | [DATA_NEEDED: RDS(on) at 2.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.1 V (logic-level) |
| Gate Charge Qg typ | — | [DATA_NEEDED: Qg total gate charge] |
| Power Dissipation (Ta=25C) | — | 1.3 W |
| Sin halógenos | — | Yes |