IRS21271STRPBF vs IR2117STRPBF Comparación
Comparación detallada lado a lado de IRS21271STRPBF por Infineon y IR2117STRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRS21271STRPBF | IR2117STRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,02 | $0,58 |
| Función | High-Side Gate Driver with Current Sense and Fault Output | Gate Driver, Non-Inverting |
| Number of Channels | 1 | — |
| Input Type | Non-Inverting | — |
| Maximum Offset (Bootstrap) Voltage | 600 V | — |
| Gate Drive Voltage Range | 9 V to 20 V (automotive VBS range) | — |
| VCC Supply Voltage | 12 V to 20 V | — |
| Source Current (typical) | 0.29 A | — |
| Sink Current (typical) | 0.6 A | — |
| Logic Input Compatibility | CMOS / LSTTL, down to 3.3 V | — |
| Current Sense Comparator | Integrated (CS pin with reference) | — |
| Fault Output | Yes (open-drain FAULT pin) | — |
| Floating Channel Transient Immunity | Negative VS transient tolerant, dV/dt immune | — |
| Rango de temperatura de funcionamiento | -40C to +125C | -40 C to +125 C |
| Encapsulado | 8-SOIC (3.90 mm body width) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL 3 | MSL3 (per JEDEC J-STD-020) |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| Configuration | — | High-Side Single Channel |
| Input Logic Compatibility | — | CMOS / TTL |
| Número de salidas | — | 1 |
| Driven Device | — | N-Channel MOSFET / IGBT |
| Gate Drive Supply Voltage (VCC) | — | 10 V to 20 V |
| Floating Channel Offset Voltage | — | up to +600 V |
| Peak Source Current (IOUT+) | — | 250 mA |
| Peak Sink Current (IOUT-) | — | 500 mA |
| Propagation Delay (Ton/Toff) | — | 125 ns (max) |
| Tiempo de subida | — | 80 ns (typ) |
| Tiempo de bajada | — | 40 ns (typ) |
| Undervoltage Lockout (UVLO) | — | Yes |
| Negative Transient Voltage Tolerance | — | Yes, dV/dt immune |
| Encapsulado / Carcasa | — | 8-SOIC (0.154 inch / 3.90 mm width) |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |