IRS21271STRPBF vs IR2117STRPBF 对比

详细并排对比 IRS21271STRPBF 出自 Infineon 和 IR2117STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS21271STRPBF IRS21271STRPBF - 600V High-Side Gate Driver IC | Infineon

IRS21271STRPBF - 600V High-Side Gate Driver IC | Infineon

IRS21271STRPBF ✓ 量产中

规格对比

参数 IRS21271STRPBF IR2117STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.02 $0.58
功能 High-Side Gate Driver with Current Sense and Fault Output Gate Driver, Non-Inverting
Number of Channels 1 —
Input Type Non-Inverting —
Maximum Offset (Bootstrap) Voltage 600 V —
Gate Drive Voltage Range 9 V to 20 V (automotive VBS range) —
VCC Supply Voltage 12 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.6 A —
Logic Input Compatibility CMOS / LSTTL, down to 3.3 V —
Current Sense Comparator Integrated (CS pin with reference) —
Fault Output Yes (open-drain FAULT pin) —
Floating Channel Transient Immunity Negative VS transient tolerant, dV/dt immune —
工作温度范围 -40C to +125C -40 C to +125 C
封装 8-SOIC (3.90 mm body width) —
安装类型 Surface Mount Surface Mount
MSL 等级 MSL 3 MSL3 (per JEDEC J-STD-020)
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
Configuration — High-Side Single Channel
Input Logic Compatibility — CMOS / TTL
输出数量 — 1
Driven Device — N-Channel MOSFET / IGBT
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Channel Offset Voltage — up to +600 V
Peak Source Current (IOUT+) — 250 mA
Peak Sink Current (IOUT-) — 500 mA
Propagation Delay (Ton/Toff) — 125 ns (max)
上升时间 — 80 ns (typ)
下降时间 — 40 ns (typ)
Undervoltage Lockout (UVLO) — Yes
Negative Transient Voltage Tolerance — Yes, dV/dt immune
封装 / 外壳 — 8-SOIC (0.154 inch / 3.90 mm width)
RoHS 状态 — Compliant
Lead-Free — Yes

数据手册与资源

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