ISA250300C04LMDSXTMA1 vs IRFB3207ZPBF Comparación
Comparación detallada lado a lado de ISA250300C04LMDSXTMA1 por Infineon y IRFB3207ZPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon
ISA250300C04LMDSXTMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | ISA250300C04LMDSXTMA1 | IRFB3207ZPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,61 | $1,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Product Family | OptiMOS 3 | — |
| Configuration | Dual N-channel + P-channel (N+P array) | — |
| Drain-Source Voltage (VDS) | 40 V | 75 V |
| Continuous Drain Current N-channel | 5.9 A (Ta), 7.9 A (Tc) | — |
| Continuous Drain Current P-channel | 5.8 A (Ta), 7.8 A (Tc) | — |
| Power Dissipation | 1.4 W (Ta), 2.5 W (Tc) | — |
| Encapsulado | SO-8 (PG-DSO-8-920) | TO-220AB (3-lead through-hole) |
| Tipo de montaje | Surface Mount | Through Hole |
| Technology | Trench MOSFET (OptiMOS 3) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Packaging | Tape & Reel (suffix XTMA1) | — |
| Datasheet Document | Infineon ISA250300C04LMDS datasheet (per Infineon product page) | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range per channel] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) per channel at specified VGS] | — |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Nivel MSL | — | N/A (through-hole) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |