ISA250300C04LMDSXTMA1 vs IRFB3207ZPBF 对比

详细并排对比 ISA250300C04LMDSXTMA1 出自 Infineon 和 IRFB3207ZPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon

ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon

ISA250300C04LMDSXTMA1 ✓ 量产中

规格对比

参数 ISA250300C04LMDSXTMA1 IRFB3207ZPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.61 $1.62
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Product Family OptiMOS 3 —
Configuration Dual N-channel + P-channel (N+P array) —
Drain-Source Voltage (VDS) 40 V 75 V
Continuous Drain Current N-channel 5.9 A (Ta), 7.9 A (Tc) —
Continuous Drain Current P-channel 5.8 A (Ta), 7.8 A (Tc) —
Power Dissipation 1.4 W (Ta), 2.5 W (Tc) —
封装 SO-8 (PG-DSO-8-920) TO-220AB (3-lead through-hole)
安装类型 Surface Mount Through Hole
Technology Trench MOSFET (OptiMOS 3) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Packaging Tape & Reel (suffix XTMA1) —
Datasheet Document Infineon ISA250300C04LMDS datasheet (per Infineon product page) —
工作温度范围 [DATA_NEEDED: operating temperature range] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range per channel] —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) per channel at specified VGS] —
RoHS 状态 Compliant —
Lead-Free Yes —
Part Number — IRFB3207ZPBF
Series — HEXFET
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
工作结温 — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
MSL 等级 — N/A (through-hole)
Avalanche Rated — Yes (improved Z-variant ruggedness)

数据手册与资源

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