ISA250300C04LMDSXTMA1 vs IRFB3207ZPBF Comparaison
Comparaison détaillée côte à côte de ISA250300C04LMDSXTMA1 par Infineon et IRFB3207ZPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon
ISA250300C04LMDSXTMA1 ✓ Actif
Comparaison des spécifications
| Paramètre | ISA250300C04LMDSXTMA1 | IRFB3207ZPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,61 | $1,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Product Family | OptiMOS 3 | — |
| Configuration | Dual N-channel + P-channel (N+P array) | — |
| Drain-Source Voltage (VDS) | 40 V | 75 V |
| Continuous Drain Current N-channel | 5.9 A (Ta), 7.9 A (Tc) | — |
| Continuous Drain Current P-channel | 5.8 A (Ta), 7.8 A (Tc) | — |
| Power Dissipation | 1.4 W (Ta), 2.5 W (Tc) | — |
| Boîtier | SO-8 (PG-DSO-8-920) | TO-220AB (3-lead through-hole) |
| Type de montage | Surface Mount | Through Hole |
| Technology | Trench MOSFET (OptiMOS 3) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Packaging | Tape & Reel (suffix XTMA1) | — |
| Datasheet Document | Infineon ISA250300C04LMDS datasheet (per Infineon product page) | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range per channel] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) per channel at specified VGS] | — |
| Statut RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Température de jonction en fonctionnement | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Niveau MSL | — | N/A (through-hole) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |