ISA250300C04LMDSXTMA1 vs IRFB3207ZPBF Comparison
Detailed side-by-side comparison of ISA250300C04LMDSXTMA1 by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon
ISA250300C04LMDSXTMA1 β Active
Specification Comparison
| Parameter | ISA250300C04LMDSXTMA1 | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Product Family | OptiMOS 3 | β |
| Configuration | Dual N-channel + P-channel (N+P array) | β |
| Drain-Source Voltage (VDS) | 40 V | 75 V |
| Continuous Drain Current N-channel | 5.9 A (Ta), 7.9 A (Tc) | β |
| Continuous Drain Current P-channel | 5.8 A (Ta), 7.8 A (Tc) | β |
| Power Dissipation | 1.4 W (Ta), 2.5 W (Tc) | β |
| Package | SO-8 (PG-DSO-8-920) | TO-220AB (3-lead through-hole) |
| Mounting Type | Surface Mount | Through Hole |
| Technology | Trench MOSFET (OptiMOS 3) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Packaging | Tape & Reel (suffix XTMA1) | β |
| Datasheet Document | Infineon ISA250300C04LMDS datasheet (per Infineon product page) | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range per channel] | β |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) per channel at specified VGS] | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Part Number | β | IRFB3207ZPBF |
| Series | β | HEXFET |
| Continuous Drain Current (ID) at TC=25C | β | 120 A |
| Silicon-Limited Drain Current | β | 170 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | β | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | β | 300 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free) |
| MSL Level | β | N/A (through-hole) |
| Avalanche Rated | β | Yes (improved Z-variant ruggedness) |