ISC009N03LF2SATMA1 vs ISC028N03LF2SATMA1 Comparación
Comparación detallada lado a lado de ISC009N03LF2SATMA1 por Infineon y ISC028N03LF2SATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISC009N03LF2SATMA1 - 30V 341A 0.9mΩ N-Channel MOSFET | Infineon
ISC009N03LF2SATMA1 ✓ ActivoInfineon
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISC009N03LF2SATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,48 | $0,86 |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS™ trench | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 43 A | — |
| Continuous Drain Current (ID) at Tc | 341 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 188 W | — |
| On-Resistance RDS(on) max | 0.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | — |
| Encapsulado | PG-TDSON-8-62 (SuperSO8 5x6) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (junction, [DATA_NEEDED: exact operating range from datasheet]) | — |
| Gate Drive Voltage (VGS) | 10 V (typical for rated RDS(on)) | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 30V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 128 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 2.35 V |
| Power Dissipation at TA | — | 3 W |
| Power Dissipation at TC | — | 83 W |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| RoHS / Lead-Free | — | Yes (RoHS compliant) |