ISC009N03LF2SATMA1 - 30V 341A 0.9mΩ N-Channel MOSFET | Infineon
N.º de pieza: ISC009N03LF2SATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.55 | $25,50 |
| 100 | $2.21 | $221,00 |
| 500 | $1.94 | $970,00 |
| 1.000 | $1.72 | $1.720,00 |
| 3.000 | $1.48 | $4.440,00 |
ISC009N03LF2SATMA1 Descripción general
A power MOSFET is a voltage-controlled semiconductor switch used to regulate or convert electrical energy in switching power supplies, motor drives, and battery management. Within the discrete-semiconductor hierarchy, MOSFETs sit beneath transistors and above specialized sub-types such as logic-level FETs; the N-channel enhancement-mode variant is the most common building block for low-side and high-side switching in DC-DC converters. The ISC009N03LF2SATMA1 belongs to the Infineon 30 V OptiMOS family, optimized for low RDS(on) at small package sizes.
Key specifications include a 30 V drain-source breakdown voltage, 341 A continuous drain current at TC, 0.9 mΩ maximum RDS(on) at VGS = 10 V, and a gate threshold voltage around 2.35 V. The 188 W power dissipation rating at TC allows operation in high-current paths without immediate thermal derating concerns, while the SuperSO8 5x6 footprint (PG-TDSON-8-62) provides an exposed pad that drops junction-to-case thermal resistance dramatically compared to smaller MOSFET packages.
Architecturally, the part uses a trench-gate cell design that maximizes channel density per square millimeter, which directly translates to the sub-milliohm RDS(on). This is achieved by shrinking the unit cell pitch while preserving a robust breakdown margin suitable for 30 V systems and short transient over-voltages on 24 V buses.
Typical applications include high-current DC-DC converters, e-mobility and e-bike motor control, battery management system (BMS) protection, hot-swap and OR-ing circuits, and 24 V industrial load switching. Designers typically place it as the low-side synchronous FET in point-of-load converters or as the main switch in hot-swap controllers.
When designing with this part, ensure the gate driver can supply and sink sufficient peak current to charge the gate charge quickly; a 10 V gate drive is required to achieve the rated 0.9 mΩ. PCB layout must provide a low-impedance source connection and adequate copper area on the exposed pad.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternativas directas para ISC009N03LF2SATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con ISC009N03LF2SATMA1 (mismo factor de forma y huella) — difiere en Package, Technology, Gate Threshold Voltage (VGS(th)), Continuous Drain Current (ID) at TA=25C, Continuous Drain Current (ID) at Ta.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
ISC028N03LF2SATMA1
✅ Sustitución directa✓ En stock
$0.86 / unidad
Ver hoja de datos →ISZ028N03LF2SATMA1
✅ Sustitución directa✓ En stock
$0.49 / unidad
Ver hoja de datos →ISZ033N03LF2SATMA1
✅ Sustitución directa✓ En stock
$0.68 / unidad
Ver hoja de datos →ISC015N06NM5ATMA1
✅ Sustitución directa✓ En stock
$0.62 / unidad
Ver hoja de datos →ISZ056N03LF2SATMA1
✅ Sustitución directa✓ En stock
$0.49 / unidad
Ver hoja de datos →BSC019N04LSGATMA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
ISC009N03LF2SATMA1 Valores máximos y características eléctricas
| Tipo de transistor | N-Channel MOSFET |
| Technology | OptiMOS™ trench |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta | 43 A |
| Continuous Drain Current (ID) at Tc | 341 A |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 188 W |
| On-Resistance RDS(on) max | 0.9 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) |
| Encapsulado | PG-TDSON-8-62 (SuperSO8 5x6) |
| Tipo de montaje | Surface Mount |
| Gate Drive Voltage (VGS) | 10 V (typical for rated RDS(on)) |
| Estado RoHS | Compliant |
Configuración de pines de ISC009N03LF2SATMA1
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | D — Drain |
| Pin 5 | D — Drain (also exposed pad) |
| Pin 6 | D — Drain (also exposed pad) |
| Pin 7 | S — Source |
| Pin 8 | S — Source |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
ISC009N03LF2SATMA1 es adecuado para 6 aplicacións: High-Current DC-DC Converter, E-Bike and E-Mobility Motor Drive, Battery Management System (BMS) Protection, Hot-Swap and OR-ing Circuit, Industrial 24V Load Switching, USB-PD and Fast-Charging Power Path.
High-Current DC-DC Converter
The ISC009N03LF2SATMA1 fits 12 V to 24 V buck and buck-boost converters delivering 100 A to 300 A continuous output. Its 0.9 mΩ RDS(on) at 10 V VGS keeps synchronous-FET conduction loss below 3 W at 50 A, while the 341 A TC current rating provides ample headroom for transient loads. The SuperSO8 5x6 footprint (PG-TDSON-8-62) integrates cleanly into compact POL converter layouts. Compared to smaller SO-8 FETs it reduces the need for paralleling, which simplifies gate-drive timing and current sharing.
Recomendado
E-Bike and E-Mobility Motor Drive
In 24 V to 48 V e-bike and light electric-vehicle motor drives, the ISC009N03LF2SATMA1 serves as a low-side or half-bridge switch with 30 V VDS margin and 341 A peak current capability. Its sub-milliohm RDS(on) minimizes I²R losses during high-torque acceleration phases, improving battery runtime by an estimated 2-4% versus higher-resistance alternatives. The 5x6 mm SuperSO8 footprint enables compact motor-controller PCB layouts where space is constrained by housing geometry and connector placement.
Recomendado
Battery Management System (BMS) Protection
The ISC009N03LF2SATMA1 is well-suited as a high-current disconnect FET in 12 V to 24 V battery management systems. Its 341 A continuous rating covers the full short-circuit let-through of large Li-ion packs, while the 0.9 mΩ on-resistance keeps voltage drop below 50 mV at 50 A, preserving pack capacity measurement accuracy. The 30 V VDS handles the upper limit of a fully charged 24 V lead-acid or 7S Li-ion string with margin for transient reverse EMF during contactor opening.
Recomendado
Hot-Swap and OR-ing Circuit
In 24 V hot-swap and redundant OR-ing applications, the ISC009N03LF2SATMA1's 0.9 mΩ RDS(on) limits steady-state voltage drop to under 100 mV at 100 A, well within the load's input-tolerance window. The 341 A continuous rating handles inrush transients when paired with a controller that ramps gate voltage. The exposed-pad SuperSO8 5x6 package provides low thermal resistance when soldered to a 2+ square-inch copper pour, supporting continuous high-current operation in server backplanes and telecom equipment.
Recomendado
Industrial 24V Load Switching
The ISC009N03LF2SATMA1 acts as a high-side or low-side switch in 24 V industrial automation modules driving solenoid valves, motor starters, and relay coils. Its 30 V VDS handles the inductive flyback of 24 V coils with adequate snubber margin, while the 341 A rating tolerates inrush from capacitive loads and motor starting currents. The SuperSO8 5x6 footprint integrates into IP67-sealed industrial housings where PCB area is at a premium.
Recomendado
USB-PD and Fast-Charging Power Path
In USB-PD 3.1 high-power charging and 100 W to 240 W adapter designs, the ISC009N03LF2SATMA1 serves as a synchronous rectification FET on the secondary side of a flyback or as the high-current path FET in a buck-boost topology. Its 0.9 mΩ RDS(on) at 10 V VGS keeps synchronous-FET losses below 1% of total output power, directly impacting adapter efficiency and thermal compliance with Energy Star and CoC Tier-2 limits.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para ISC009N03LF2SATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | ISC028N03LF2SATMA1 | ISZ028N03LF2SATMA1 | ISZ033N03LF2SATMA1 | ISC015N06NM5ATMA1 | BSC019N04LSGATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-62 (SuperSO8 5x6) | PG-TDSON-8-62 - same | PG-TDSON-8-62 - same | PG-TDSON-8-62 - same | PG-TDSON-8-62 - same | PG-TDSON-8-62 - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 60 V | 40 V |
| Gate Threshold Voltage | 2.35 V (typ) | Similar OptiMOS range | Similar OptiMOS range | Similar OptiMOS range | Similar OptiMOS range | Similar OptiMOS range |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Diferenciadores clave
- Sub-milliohm RDS(on) in 5x6 mm footprint (frente a ISC028N03LF2SATMA1)
- Highest continuous current rating in 30V OptiMOS family (frente a ISZ028N03LF2SATMA1)
- Industry-standard SuperSO8 5x6 footprint (frente a BSC019N04LSGATMA1)
Notas de diseño
Estimated: At 100 A continuous drain current with RDS(on) of 0.9 mΩ, conduction loss is approximately 9 W (I²R). With a typical SuperSO8 5x6 theta_JC of ~0.5 °C/W and theta_JA of ~50 °C/W on a 1 sq-inch 2-oz copper pour, junction temperature rises about 15 °C above case at full load. Designers must ensure the PCB thermal path can sustain 188 W TC rating for transient peaks - increase copper area or add thermal vias to inner planes for continuous high-current operation.
Place the exposed pad on a continuous copper pour of at least 1 square inch (2-oz copper recommended) with thermal vias to internal ground planes for optimal heat dissipation. Source pins (2, 3, 7, 8) must be tied together on the top layer with wide traces - at 100 A even 10 mΩ of trace resistance adds 1 W of loss. Keep the gate-drive loop compact to minimize parasitic inductance that causes ringing and potential VGS overshoot above the 20 V absolute maximum.
Do not operate the ISC009N03LF2SATMA1 above the rated 30 V VDS - inductive loads like solenoids and motors generate flyback voltages that can exceed nominal supply. Add a TVS diode or RC snubber across the load. The 2.35 V gate threshold means a logic-level 3.3 V GPIO cannot fully enhance the FET; use a 10 V gate driver for rated 0.9 mΩ RDS(on). Exceeding the 175 °C maximum junction temperature degrades long-term reliability exponentially.
Keep the high-current drain-source loop area to a minimum to reduce parasitic inductance - this is critical for switching applications where di/dt can reach 1 kA/μs. Place the gate driver within 5 mm of the gate pin to limit gate-loop inductance below 5 nH. Use kelvin source connection if available; the SuperSO8 5x6 PG-TDSON-8-62 pinout allows source-pin separation from the power-path source connection for cleaner gate drive.
Información de cumplimiento
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications consult Infineon automotive-grade OptiMOS portfolio. Lead-free reflow profile per J-STD-020.
