ISC037N12NM6ATMA1 vs IPB35N10S3L26ATMA2 Comparación
Comparación detallada lado a lado de ISC037N12NM6ATMA1 por Infineon y IPB35N10S3L26ATMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | ISC037N12NM6ATMA1 | IPB35N10S3L26ATMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,62 | $0,48 |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (Vds) | 120 V | 100 V |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | — |
| Pulsed Drain Current (Idm) at Tc | 163 A | — |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 214 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | — |
| Encapsulado | PG-TDSON-8 FL (SuperSO8) | PG-TO263-3-2 (D2PAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +175C (junction) | -55C to +175C |
| Estado RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS Power-Transistor |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (Id) at Tc | — | 35 A |
| Corriente de drenador pulsada | — | 180 A |
| Power Dissipation (Pd) at Tc | — | 71 W |
| RDS(on) (typical) | — | 26.3 mOhm |
| Número de pines | — | 3 |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Automotive Qualified | — | Yes (per Infineon product page classification) |