ISZ028N03LF2SATMA1 vs ISC009N03LF2SATMA1 Comparación
Comparación detallada lado a lado de ISZ028N03LF2SATMA1 por Infineon y ISC009N03LF2SATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ ActivoInfineon
ISC009N03LF2SATMA1 - 30V 341A 0.9mΩ N-Channel MOSFET | Infineon
ISC009N03LF2SATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISZ028N03LF2SATMA1 | ISC009N03LF2SATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,49 | $1,48 |
| FET Type | N-Channel | — |
| Technology | StrongIRFET 2 (Trench MOSFET) | OptiMOS™ trench |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Tc | 128 A | 341 A |
| Continuous Drain Current (ID) at Ta | 22 A | 43 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | 2.35 V (typ) |
| On-Resistance (RDS(on)) max | 2.8 mΩ | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Encapsulado | PG-TSDSON-8 FL (FL = flat lead) | PG-TDSON-8-62 (SuperSO8 5x6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +175C (junction, typical) | -55 °C to +175 °C (junction, [DATA_NEEDED: exact operating range from datasheet]) |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | [DATA_NEEDED: MSL rating] |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 188 W |
| On-Resistance RDS(on) max | — | 0.9 mΩ |
| Gate Drive Voltage (VGS) | — | 10 V (typical for rated RDS(on)) |