K6T0808C1D-DB55 vs K6T0808C1D-DB70 Comparación
Comparación detallada lado a lado de K6T0808C1D-DB55 por Samsung Electronics y K6T0808C1D-DB70 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K6T0808C1D-DB70 - 256Kbit (32Kx8) CMOS SRAM 70ns DIP-28 | Samsung
K6T0808C1D-DB70 ⚠ Última compraComparación de especificaciones
| Parámetro | K6T0808C1D-DB55 | K6T0808C1D-DB70 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Obsolete | Última compra |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,05 | $2,40 |
| Density | 256 Kbit (32K x 8) | 256 Kbit (32,768 bytes) |
| Tipo de memoria | Asynchronous Static RAM (SRAM) | Volatile SRAM (Static RAM) |
| Organización de memoria | 32,768 words x 8 bits | — |
| Access Time (tAA) | 70 ns (max) | 70 ns |
| Supply Voltage (VCC) | 5 V (typical; 4.5 V min per SRAM class) | 4.5 V to 5.5 V |
| Temperatura de funcionamiento | -40 C to +85 C (industrial) | 0C to +70C (commercial) |
| Encapsulado | 28-pin TSOP1F (Type I, forward) | DIP-28 (600 mil, 'DB' code) |
| Tipo de montaje | Surface Mount | Through-Hole |
| Process Technology | Samsung advanced CMOS | CMOS (6T cell) |
| Standby Current | [DATA_NEEDED: typical ISB1 in uA] | — |
| Operating Current | [DATA_NEEDED: typical ICC in mA] | — |
| Tipo de salida | Three-state, bidirectional DQs | — |
| I/O Logic Level | TTL-compatible | — |
| Data Retention Voltage | [DATA_NEEDED: VDR minimum in V] | — |
| Nivel MSL | [DATA_NEEDED: MSL classification] | [DATA_NEEDED: MSL rating] |
| Estado RoHS | [DATA_NEEDED: verify on Samsung product page] | [DATA_NEEDED: RoHS compliance status] |
| Lead-Free | [DATA_NEEDED: confirm] | — |
| Memory Organization | — | 32K x 8 = 256 Kbit |
| Operating Current (ICC) | — | 60 mA (typical) |
| Standby Current (ISB1) | — | 15 uA (typical) |
| Interfaz | — | Parallel, asynchronous, TTL-compatible |
| Output Enable (OE) | — | Yes (active-low) |
| Write Enable (WE) | — | Yes (active-low) |
| Chip Enable | — | CE1 (active-low), CE2 (active-high) |
| Ancho del bus de datos | — | 8 bits |