K6T0808C1D-DB55 vs K6T0808C1D-DB70 Comparaison
Comparaison détaillée côte à côte de K6T0808C1D-DB55 par Samsung Electronics et K6T0808C1D-DB70 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K6T0808C1D-DB70 - 256Kbit (32Kx8) CMOS SRAM 70ns DIP-28 | Samsung
K6T0808C1D-DB70 ⚠ Dernier achatComparaison des spécifications
| Paramètre | K6T0808C1D-DB55 | K6T0808C1D-DB70 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Obsolete | Dernier achat |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,05 | $2,40 |
| Density | 256 Kbit (32K x 8) | 256 Kbit (32,768 bytes) |
| Type de mémoire | Asynchronous Static RAM (SRAM) | Volatile SRAM (Static RAM) |
| Organisation de la mémoire | 32,768 words x 8 bits | — |
| Access Time (tAA) | 70 ns (max) | 70 ns |
| Supply Voltage (VCC) | 5 V (typical; 4.5 V min per SRAM class) | 4.5 V to 5.5 V |
| Température de fonctionnement | -40 C to +85 C (industrial) | 0C to +70C (commercial) |
| Boîtier | 28-pin TSOP1F (Type I, forward) | DIP-28 (600 mil, 'DB' code) |
| Type de montage | Surface Mount | Through-Hole |
| Process Technology | Samsung advanced CMOS | CMOS (6T cell) |
| Standby Current | [DATA_NEEDED: typical ISB1 in uA] | — |
| Operating Current | [DATA_NEEDED: typical ICC in mA] | — |
| Type de sortie | Three-state, bidirectional DQs | — |
| I/O Logic Level | TTL-compatible | — |
| Data Retention Voltage | [DATA_NEEDED: VDR minimum in V] | — |
| Niveau MSL | [DATA_NEEDED: MSL classification] | [DATA_NEEDED: MSL rating] |
| Statut RoHS | [DATA_NEEDED: verify on Samsung product page] | [DATA_NEEDED: RoHS compliance status] |
| Lead-Free | [DATA_NEEDED: confirm] | — |
| Memory Organization | — | 32K x 8 = 256 Kbit |
| Operating Current (ICC) | — | 60 mA (typical) |
| Standby Current (ISB1) | — | 15 uA (typical) |
| Interface | — | Parallel, asynchronous, TTL-compatible |
| Output Enable (OE) | — | Yes (active-low) |
| Write Enable (WE) | — | Yes (active-low) |
| Chip Enable | — | CE1 (active-low), CE2 (active-high) |
| Largeur du bus de données | — | 8 bits |