K6X0808C1D-GF55T vs K6X0808C1D-GF55000 Comparación
Comparación detallada lado a lado de K6X0808C1D-GF55T por Samsung Electro-Mechanics y K6X0808C1D-GF55000 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electro-Mechanics
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
K6X0808C1D-GF55T ✓ ActivoSamsung Electronics
K6X0808C1D-GF55000 - 32Kx8 Async SRAM 55ns | Samsung Semiconductor
K6X0808C1D-GF55000 ✓ ActivoComparación de especificaciones
| Parámetro | K6X0808C1D-GF55T | K6X0808C1D-GF55000 |
|---|---|---|
| Marca | Samsung Electro-Mechanics | Samsung Electronics |
| Categoría | DRAM | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,85 | $3,20 |
| Tipo de memoria | SRAM - Asynchronous | SRAM - Asynchronous |
| Tamaño de memoria | 256 Kbit | 256 Kbit |
| Organización de memoria | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 55 ns |
| Tensión de alimentación | 5.0 V | 5 V |
| Interfaz | Parallel | Parallel |
| Process Technology | Full CMOS | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Encapsulado | 28-SOP (450 mil) | 28-SOP |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Active Current | [DATA_NEEDED: active current] | — |
| Data Retention Voltage | Low data retention voltage supported (per datasheet) | — |
| Control Signals | CE, OE, WE | CE, OE, WE (active low) |
| Address Bus Width | 15 bit | — |
| Ancho del bus de datos | 8 bit | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packaging | Tape & Reel (T suffix) | — |
| Operating Current | — | [DATA_NEEDED: operating current] |
| Write Cycle Time | — | [DATA_NEEDED: write cycle time] |
| Tipo de salida | — | Three-state, common data I/O |
| Memory Format | — | Volatile, no refresh required |
| Technology | — | Low-power CMOS |