K6X1008C2D-BF55 vs K6X1008C2D-TF55 Comparación
Comparación detallada lado a lado de K6X1008C2D-BF55 por Samsung Electro-Mechanics y K6X1008C2D-TF55 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electro-Mechanics
K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung
K6X1008C2D-BF55 ObsoleteSamsung Electronics
K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung
K6X1008C2D-TF55 ✗ Fin de vidaComparación de especificaciones
| Parámetro | K6X1008C2D-BF55 | K6X1008C2D-TF55 |
|---|---|---|
| Marca | Samsung Electro-Mechanics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Obsolete | Fin de vida |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,18 | $2,35 |
| Tipo de memoria | Asynchronous CMOS Static RAM (SRAM) | SRAM - Asynchronous |
| Memory Organization | 128K x 8 bit (1 Mbit) | — |
| Density | 1 Mbit | — |
| Access Time | 55 ns | — |
| Supply Voltage (VCC) | 5 V (single supply) | — |
| Operating Current (ICC) | 30 mA typical | — |
| Standby Current (ICC2) | [DATA_NEEDED: standby current value] | — |
| Interfaz | Parallel, asynchronous | Parallel |
| Ancho del bus de datos | 8 bit | — |
| Address Bus Width | 17 bit | — |
| Encapsulado | 32-SOP-525 (SOP-32) | 32-TSOP REVERSE |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature grade] | [DATA_NEEDED: operating temperature range] |
| Data Retention Voltage | Low data retention voltage supported | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Lead-Free | Yes (Lead-Free variant) | — |
| Estado RoHS | Compliant | RoHS: Yes (per distributor listing) |
| Cell Technology | 6T CMOS memory cell | — |
| Tamaño de memoria | — | 1 Mbit |
| Organización de memoria | — | 128K x 8 |
| Access Time (tAA) | — | 55 ns |
| Supply Voltage (Vcc) | — | 4.5 V to 5.5 V |
| Operating Current | — | 35 mA |
| Technology | — | Low Power Full CMOS |
| Speed Options | — | 55 ns, 70 ns |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Memory Format | — | Volatile (SRAM) |
| Clock Frequency | — | N/A (asynchronous) |