K6X1008C2D-BF55 vs K6X1008C2D-TF55 对比
详细并排对比 K6X1008C2D-BF55 出自 Samsung Electro-Mechanics 和 K6X1008C2D-TF55 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electro-Mechanics
K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung
K6X1008C2D-BF55 Obsolete
规格对比
| 参数 | K6X1008C2D-BF55 | K6X1008C2D-TF55 |
|---|---|---|
| 品牌 | Samsung Electro-Mechanics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | Obsolete | 停产 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.18 | $2.35 |
| 存储器类型 | Asynchronous CMOS Static RAM (SRAM) | SRAM - Asynchronous |
| Memory Organization | 128K x 8 bit (1 Mbit) | — |
| Density | 1 Mbit | — |
| Access Time | 55 ns | — |
| Supply Voltage (VCC) | 5 V (single supply) | — |
| Operating Current (ICC) | 30 mA typical | — |
| Standby Current (ICC2) | [DATA_NEEDED: standby current value] | — |
| 接口 | Parallel, asynchronous | Parallel |
| 数据总线宽度 | 8 bit | — |
| Address Bus Width | 17 bit | — |
| 封装 | 32-SOP-525 (SOP-32) | 32-TSOP REVERSE |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature grade] | [DATA_NEEDED: operating temperature range] |
| Data Retention Voltage | Low data retention voltage supported | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| Lead-Free | Yes (Lead-Free variant) | — |
| RoHS 状态 | Compliant | RoHS: Yes (per distributor listing) |
| Cell Technology | 6T CMOS memory cell | — |
| 存储容量 | — | 1 Mbit |
| 存储组织 | — | 128K x 8 |
| Access Time (tAA) | — | 55 ns |
| Supply Voltage (Vcc) | — | 4.5 V to 5.5 V |
| Operating Current | — | 35 mA |
| Technology | — | Low Power Full CMOS |
| Speed Options | — | 55 ns, 70 ns |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Memory Format | — | Volatile (SRAM) |
| Clock Frequency | — | N/A (asynchronous) |