K6X1008C2D-BF55 vs K6X1008C2D-TF55 Comparaison
Comparaison détaillée côte à côte de K6X1008C2D-BF55 par Samsung Electro-Mechanics et K6X1008C2D-TF55 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electro-Mechanics
K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung
K6X1008C2D-BF55 ObsoleteSamsung Electronics
K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung
K6X1008C2D-TF55 ✗ Fin de vieComparaison des spécifications
| Paramètre | K6X1008C2D-BF55 | K6X1008C2D-TF55 |
|---|---|---|
| Marque | Samsung Electro-Mechanics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Obsolete | Fin de vie |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,18 | $2,35 |
| Type de mémoire | Asynchronous CMOS Static RAM (SRAM) | SRAM - Asynchronous |
| Memory Organization | 128K x 8 bit (1 Mbit) | — |
| Density | 1 Mbit | — |
| Access Time | 55 ns | — |
| Supply Voltage (VCC) | 5 V (single supply) | — |
| Operating Current (ICC) | 30 mA typical | — |
| Standby Current (ICC2) | [DATA_NEEDED: standby current value] | — |
| Interface | Parallel, asynchronous | Parallel |
| Largeur du bus de données | 8 bit | — |
| Address Bus Width | 17 bit | — |
| Boîtier | 32-SOP-525 (SOP-32) | 32-TSOP REVERSE |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: operating temperature grade] | [DATA_NEEDED: operating temperature range] |
| Data Retention Voltage | Low data retention voltage supported | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Lead-Free | Yes (Lead-Free variant) | — |
| Statut RoHS | Compliant | RoHS: Yes (per distributor listing) |
| Cell Technology | 6T CMOS memory cell | — |
| Taille de mémoire | — | 1 Mbit |
| Organisation de la mémoire | — | 128K x 8 |
| Access Time (tAA) | — | 55 ns |
| Supply Voltage (Vcc) | — | 4.5 V to 5.5 V |
| Operating Current | — | 35 mA |
| Technology | — | Low Power Full CMOS |
| Speed Options | — | 55 ns, 70 ns |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Memory Format | — | Volatile (SRAM) |
| Clock Frequency | — | N/A (asynchronous) |