K9EUGY8S0M-BCK0 vs K9IUGY8J7B-CCK0 Comparación
Comparación detallada lado a lado de K9EUGY8S0M-BCK0 por Samsung Electro-Mechanics y K9IUGY8J7B-CCK0 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electro-Mechanics
K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9EUGY8S0M-BCK0 ✓ ActivoComparación de especificaciones
| Parámetro | K9EUGY8S0M-BCK0 | K9IUGY8J7B-CCK0 |
|---|---|---|
| Marca | Samsung Electro-Mechanics | Samsung Electronics |
| Categoría | Memory ICs | EEPROM |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $1,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9-series V-NAND Flash | — |
| Tipo de memoria | NAND Flash (non-volatile) | NAND Flash, 3D V-NAND TLC |
| Density | [DATA_NEEDED: memory density] | — |
| Organización de memoria | [DATA_NEEDED: organization x8/x16] | — |
| Cell Type | [DATA_NEEDED: SLC/MLC/TLC/QLC] | TLC (3 bits per cell) |
| Tensión de alimentación | [DATA_NEEDED: VCC voltage] | — |
| VCCQ Voltage | [DATA_NEEDED: VCCQ voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Access Time (tR) | [DATA_NEEDED: read access time] | — |
| Program Time (tPROG) | [DATA_NEEDED: program time] | — |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Encapsulado | [DATA_NEEDED: package type and dimensions] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Tipo de montaje | Surface Mount | Surface Mount (BGA) |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packing | [DATA_NEEDED: tray or tape and reel] | — |
| Memory Density | — | 1 Tb (Tera bit) |
| V-NAND Generation | — | V6 (6th generation) |
| Process Node / Layer Count | — | 4448-128L (128-layer) |
| Tipo de interfaz | — | [DATA_NEEDED: bus interface type] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ voltage] |
| Ancho del bus de datos | — | [DATA_NEEDED: data bus width] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycle endurance] |
| Package Type | — | [DATA_NEEDED: exact package code] |