K9EUGY8S0M-BCK0 vs K9IUGY8J7B-CCK0 Comparaison
Comparaison détaillée côte à côte de K9EUGY8S0M-BCK0 par Samsung Electro-Mechanics et K9IUGY8J7B-CCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electro-Mechanics
K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9EUGY8S0M-BCK0 ✓ ActifComparaison des spécifications
| Paramètre | K9EUGY8S0M-BCK0 | K9IUGY8J7B-CCK0 |
|---|---|---|
| Marque | Samsung Electro-Mechanics | Samsung Electronics |
| Catégorie | Memory ICs | EEPROM |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $1,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9-series V-NAND Flash | — |
| Type de mémoire | NAND Flash (non-volatile) | NAND Flash, 3D V-NAND TLC |
| Density | [DATA_NEEDED: memory density] | — |
| Organisation de la mémoire | [DATA_NEEDED: organization x8/x16] | — |
| Cell Type | [DATA_NEEDED: SLC/MLC/TLC/QLC] | TLC (3 bits per cell) |
| Tension d'alimentation | [DATA_NEEDED: VCC voltage] | — |
| VCCQ Voltage | [DATA_NEEDED: VCCQ voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Access Time (tR) | [DATA_NEEDED: read access time] | — |
| Program Time (tPROG) | [DATA_NEEDED: program time] | — |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Boîtier | [DATA_NEEDED: package type and dimensions] | — |
| Température de fonctionnement | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Type de montage | Surface Mount | Surface Mount (BGA) |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packing | [DATA_NEEDED: tray or tape and reel] | — |
| Memory Density | — | 1 Tb (Tera bit) |
| V-NAND Generation | — | V6 (6th generation) |
| Process Node / Layer Count | — | 4448-128L (128-layer) |
| Type d'interface | — | [DATA_NEEDED: bus interface type] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ voltage] |
| Largeur du bus de données | — | [DATA_NEEDED: data bus width] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycle endurance] |
| Package Type | — | [DATA_NEEDED: exact package code] |