K9KUGY8J7C-BCK0 vs K9IUGY8J7B-CCK0 Comparación
Comparación detallada lado a lado de K9KUGY8J7C-BCK0 por Samsung Electronics y K9IUGY8J7B-CCK0 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
K9KUGY8J7C-BCK0 ✓ ActivoComparación de especificaciones
| Parámetro | K9KUGY8J7C-BCK0 | K9IUGY8J7B-CCK0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | EEPROM |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,55 | $1,00 |
| Tipo de memoria | NAND Flash (TLC V-NAND) | NAND Flash, 3D V-NAND TLC |
| Density | 1 Tb | — |
| Organización de memoria | [DATA_NEEDED: page/block organization] | — |
| Cell Type | TLC (3 bits/cell) | TLC (3 bits per cell) |
| Tipo de interfaz | [DATA_NEEDED: toggle DDR / ONFI mode] | [DATA_NEEDED: bus interface type] |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range in V] | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ range in V] | [DATA_NEEDED: VCCQ voltage] |
| Page Size | [DATA_NEEDED: page size in KB] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | [DATA_NEEDED: P/E cycle endurance] |
| Package Type | BGA | [DATA_NEEDED: exact package code] |
| Package Code | [DATA_NEEDED: package code / ball count] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: temperature range in C] | [DATA_NEEDED: operating temperature range] |
| Tipo de montaje | Surface Mount | Surface Mount (BGA) |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Grade Suffix | BCK0 | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Memory Density | — | 1 Tb (Tera bit) |
| V-NAND Generation | — | V6 (6th generation) |
| Process Node / Layer Count | — | 4448-128L (128-layer) |
| Ancho del bus de datos | — | [DATA_NEEDED: data bus width] |