K9KUGY8J7C-BCK0 vs K9IUGY8J7B-CCK0 Comparaison
Comparaison détaillée côte à côte de K9KUGY8J7C-BCK0 par Samsung Electronics et K9IUGY8J7B-CCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
K9KUGY8J7C-BCK0 ✓ ActifComparaison des spécifications
| Paramètre | K9KUGY8J7C-BCK0 | K9IUGY8J7B-CCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | EEPROM |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $9,55 | $1,00 |
| Type de mémoire | NAND Flash (TLC V-NAND) | NAND Flash, 3D V-NAND TLC |
| Density | 1 Tb | — |
| Organisation de la mémoire | [DATA_NEEDED: page/block organization] | — |
| Cell Type | TLC (3 bits/cell) | TLC (3 bits per cell) |
| Type d'interface | [DATA_NEEDED: toggle DDR / ONFI mode] | [DATA_NEEDED: bus interface type] |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range in V] | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ range in V] | [DATA_NEEDED: VCCQ voltage] |
| Page Size | [DATA_NEEDED: page size in KB] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | [DATA_NEEDED: P/E cycle endurance] |
| Package Type | BGA | [DATA_NEEDED: exact package code] |
| Package Code | [DATA_NEEDED: package code / ball count] | — |
| Température de fonctionnement | [DATA_NEEDED: temperature range in C] | [DATA_NEEDED: operating temperature range] |
| Type de montage | Surface Mount | Surface Mount (BGA) |
| Statut RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Grade Suffix | BCK0 | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Memory Density | — | 1 Tb (Tera bit) |
| V-NAND Generation | — | V6 (6th generation) |
| Process Node / Layer Count | — | 4448-128L (128-layer) |
| Largeur du bus de données | — | [DATA_NEEDED: data bus width] |