K9MUGY8R4A-CCQ0 vs K9KUGY8J7C-BCK0 Comparación
Comparación detallada lado a lado de K9MUGY8R4A-CCQ0 por Samsung Electronics y K9KUGY8J7C-BCK0 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics
K9MUGY8R4A-CCQ0 ✓ ActivoSamsung Electronics
K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
K9KUGY8J7C-BCK0 ✓ ActivoComparación de especificaciones
| Parámetro | K9MUGY8R4A-CCQ0 | K9KUGY8J7C-BCK0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $9,55 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9 V-NAND (NAND Flash) | — |
| Memory Technology | V-NAND (vertical NAND flash) | — |
| Cell Type | [DATA_NEEDED: cell type (MLC/TLC)] | TLC (3 bits/cell) |
| Density | [DATA_NEEDED: total density] | 1 Tb |
| Organización de memoria | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Tipo de interfaz | [DATA_NEEDED: interface (Toggle DDR/ONFI)] | [DATA_NEEDED: toggle DDR / ONFI mode] |
| Maximum I/O Speed | [DATA_NEEDED: data transfer rate] | — |
| Supply Voltage - VCC | [DATA_NEEDED: VCC range] | — |
| Supply Voltage - VCCQ | [DATA_NEEDED: VCCQ range] | — |
| Page Program Time (typ) | [DATA_NEEDED: tPROG] | — |
| Block Erase Time (typ) | [DATA_NEEDED: tBERS] | — |
| Endurance (P/E cycles) | [DATA_NEEDED: endurance] | — |
| Package Type | [DATA_NEEDED: package type and pin count] | BGA |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range in C] |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Tipo de memoria | — | NAND Flash (TLC V-NAND) |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range in V] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ range in V] |
| Page Size | — | [DATA_NEEDED: page size in KB] |
| Block Size | — | [DATA_NEEDED: block size] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance] |
| Package Code | — | [DATA_NEEDED: package code / ball count] |
| Grade Suffix | — | BCK0 |