K9MUGY8R4A-CCQ0 vs K9KUGY8J7C-BCK0 对比

详细并排对比 K9MUGY8R4A-CCQ0 出自 Samsung Electronics 和 K9KUGY8J7C-BCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9MUGY8R4A-CCQ0 K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9MUGY8R4A-CCQ0 ✓ 量产中
Samsung Electronics
K9KUGY8J7C-BCK0 K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics

K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics

K9KUGY8J7C-BCK0 ✓ 量产中

规格对比

参数 K9MUGY8R4A-CCQ0 K9KUGY8J7C-BCK0
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $9.55
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9 V-NAND (NAND Flash) —
Memory Technology V-NAND (vertical NAND flash) —
Cell Type [DATA_NEEDED: cell type (MLC/TLC)] TLC (3 bits/cell)
Density [DATA_NEEDED: total density] 1 Tb
存储组织 [DATA_NEEDED: page/block organization] [DATA_NEEDED: page/block organization]
接口类型 [DATA_NEEDED: interface (Toggle DDR/ONFI)] [DATA_NEEDED: toggle DDR / ONFI mode]
Maximum I/O Speed [DATA_NEEDED: data transfer rate] —
Supply Voltage - VCC [DATA_NEEDED: VCC range] —
Supply Voltage - VCCQ [DATA_NEEDED: VCCQ range] —
Page Program Time (typ) [DATA_NEEDED: tPROG] —
Block Erase Time (typ) [DATA_NEEDED: tBERS] —
Endurance (P/E cycles) [DATA_NEEDED: endurance] —
Package Type [DATA_NEEDED: package type and pin count] BGA
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range in C]
安装类型 Surface Mount Surface Mount
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant
存储器类型 — NAND Flash (TLC V-NAND)
Supply Voltage (VCC) — [DATA_NEEDED: VCC range in V]
Supply Voltage (VCCQ) — [DATA_NEEDED: VCCQ range in V]
Page Size — [DATA_NEEDED: page size in KB]
Block Size — [DATA_NEEDED: block size]
Program/Erase Cycles — [DATA_NEEDED: P/E endurance]
Package Code — [DATA_NEEDED: package code / ball count]
Grade Suffix — BCK0

数据手册与资源

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