K9MUGY8R4A-CCQ0 vs K9KUGY8J7C-BCK0 Comparaison
Comparaison détaillée côte à côte de K9MUGY8R4A-CCQ0 par Samsung Electronics et K9KUGY8J7C-BCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics
K9MUGY8R4A-CCQ0 ✓ ActifSamsung Electronics
K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
K9KUGY8J7C-BCK0 ✓ ActifComparaison des spécifications
| Paramètre | K9MUGY8R4A-CCQ0 | K9KUGY8J7C-BCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $9,55 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9 V-NAND (NAND Flash) | — |
| Memory Technology | V-NAND (vertical NAND flash) | — |
| Cell Type | [DATA_NEEDED: cell type (MLC/TLC)] | TLC (3 bits/cell) |
| Density | [DATA_NEEDED: total density] | 1 Tb |
| Organisation de la mémoire | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Type d'interface | [DATA_NEEDED: interface (Toggle DDR/ONFI)] | [DATA_NEEDED: toggle DDR / ONFI mode] |
| Maximum I/O Speed | [DATA_NEEDED: data transfer rate] | — |
| Supply Voltage - VCC | [DATA_NEEDED: VCC range] | — |
| Supply Voltage - VCCQ | [DATA_NEEDED: VCCQ range] | — |
| Page Program Time (typ) | [DATA_NEEDED: tPROG] | — |
| Block Erase Time (typ) | [DATA_NEEDED: tBERS] | — |
| Endurance (P/E cycles) | [DATA_NEEDED: endurance] | — |
| Package Type | [DATA_NEEDED: package type and pin count] | BGA |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range in C] |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Type de mémoire | — | NAND Flash (TLC V-NAND) |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range in V] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ range in V] |
| Page Size | — | [DATA_NEEDED: page size in KB] |
| Block Size | — | [DATA_NEEDED: block size] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance] |
| Package Code | — | [DATA_NEEDED: package code / ball count] |
| Grade Suffix | — | BCK0 |