K9QDGB8U7M vs K9MDG08U5M Comparación
Comparación detallada lado a lado de K9QDGB8U7M por Samsung Electronics y K9MDG08U5M por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | K9QDGB8U7M | K9MDG08U5M |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Unknown | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $35,50 |
| Manufacturer | Samsung Electronics | — |
| Product Family | K9 NAND Flash | — |
| Tipo de memoria | NAND Flash | MLC Large Block NAND Flash |
| Density | [DATA_NEEDED: Density] | 16 Gbit (2 GB) |
| Organización de memoria | [DATA_NEEDED: Organization] | 16G x 8 bit |
| Tipo de interfaz | [DATA_NEEDED: Interface Type] | — |
| Tensión de alimentación | [DATA_NEEDED: Supply Voltage] | — |
| Page Size | [DATA_NEEDED: Page Size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: Block Size] | [DATA_NEEDED: block size] |
| Program/Erase Endurance | [DATA_NEEDED: Program/Erase Endurance] | — |
| Read Latency | [DATA_NEEDED: Read Latency] | — |
| Package Type | BGA (surface mount) | — |
| Temperatura de funcionamiento | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | [DATA_NEEDED: RoHS Status] | unknown |
| Cell Type | — | MLC (2 bits per cell) |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Interfaz | — | Asynchronous x8 multiplexed address/data |
| Encapsulado | — | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |