K9QDGB8U7M vs K9MDG08U5M 对比

详细并排对比 K9QDGB8U7M 出自 Samsung Electronics 和 K9MDG08U5M 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9QDGB8U7M K9QDGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9QDGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9QDGB8U7M Unknown
Samsung Electronics
K9MDG08U5M K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M ✓ 量产中

规格对比

参数 K9QDGB8U7M K9MDG08U5M
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 Unknown 有效
库存状态 有库存 有库存
单价(USD) $0.00 $35.50
Manufacturer Samsung Electronics —
Product Family K9 NAND Flash —
存储器类型 NAND Flash MLC Large Block NAND Flash
Density [DATA_NEEDED: Density] 16 Gbit (2 GB)
存储组织 [DATA_NEEDED: Organization] 16G x 8 bit
接口类型 [DATA_NEEDED: Interface Type] —
电源电压 [DATA_NEEDED: Supply Voltage] —
Page Size [DATA_NEEDED: Page Size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: Block Size] [DATA_NEEDED: block size]
Program/Erase Endurance [DATA_NEEDED: Program/Erase Endurance] —
Read Latency [DATA_NEEDED: Read Latency] —
Package Type BGA (surface mount) —
工作温度 [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: operating temperature range]
安装类型 Surface Mount Surface Mount
RoHS 状态 [DATA_NEEDED: RoHS Status] unknown
Cell Type — MLC (2 bits per cell)
Supply Voltage Min — 2.7 V
Supply Voltage Max — 3.6 V
接口 — Asynchronous x8 multiplexed address/data
封装 — 48-pin TSOP1 dual stacked, 12 mm x 20 mm
Terminals — 48
Circuits — 1
Die Configuration — Dual stacked
Page Read Time (tR) — [DATA_NEEDED: tR]
Program Time (tPROG) — [DATA_NEEDED: tPROG]

数据手册与资源

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