M29W160FB70N3E vs M29W160EB70N3E Comparación
Comparación detallada lado a lado de M29W160FB70N3E por Micron Technology y M29W160EB70N3E por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29W160FB70N3E | M29W160EB70N3E |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,58 | $1,76 |
| Tipo de memoria | FLASH - NOR | FLASH - NOR |
| Tamaño de memoria | 16 Mbit (2M x8 / 1M x16) | 16 Mbit (2M x8, 1M x16) |
| Access Time | 70 ns | 70 ns |
| Interfaz | Parallel | Parallel |
| Supply Voltage (VCC) | 3.0 V to 3.6 V | 2.7 V to 3.6 V |
| Programming Voltage | Single supply (no separate VPP required) | — |
| Bus Configuration | x8 / x16 selectable (BYTE# pin) | — |
| Architecture | Boot block | — |
| Encapsulado / Carcasa | 48-TFSOP (0.724 in, 18.40 mm width) | 48-TFSOP (0.724 in, 18.40 mm width) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packaging | Tray | Tray |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Status Output | Data polling / toggle bit | — |
| Block Protection | Yes (boot block protection) | — |
| Organización de memoria | — | 2M x8 / 1M x16 |
| Programming Time | — | 10 us (typical) |
| Cell Type | — | SLC NOR |
| Speed Grade | — | -70 |
| FBGA Code | — | N/A (TSOP package) |
| Estado RoHS | — | [DATA_NEEDED: RoHS status] |
| Nivel MSL | — | [DATA_NEEDED: moisture sensitivity level] |