M29W160FB70N3E vs M29W160EB70N3E 对比

详细并排对比 M29W160FB70N3E 出自 Micron Technology 和 M29W160EB70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W160FB70N3E M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E ✓ 量产中
Micron Technology
M29W160EB70N3E M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E ✓ 量产中

规格对比

参数 M29W160FB70N3E M29W160EB70N3E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.58 $1.76
存储器类型 FLASH - NOR FLASH - NOR
存储容量 16 Mbit (2M x8 / 1M x16) 16 Mbit (2M x8, 1M x16)
Access Time 70 ns 70 ns
接口 Parallel Parallel
Supply Voltage (VCC) 3.0 V to 3.6 V 2.7 V to 3.6 V
Programming Voltage Single supply (no separate VPP required) —
Bus Configuration x8 / x16 selectable (BYTE# pin) —
Architecture Boot block —
封装 / 外壳 48-TFSOP (0.724 in, 18.40 mm width) 48-TFSOP (0.724 in, 18.40 mm width)
安装类型 Surface Mount Surface Mount
Packaging Tray Tray
工作温度 [DATA_NEEDED: operating temperature range] -40C to +125C
Program/Erase Endurance [DATA_NEEDED: program/erase cycles] —
Data Retention [DATA_NEEDED: data retention] —
Status Output Data polling / toggle bit —
Block Protection Yes (boot block protection) —
存储组织 — 2M x8 / 1M x16
Programming Time — 10 us (typical)
Cell Type — SLC NOR
Speed Grade — -70
FBGA Code — N/A (TSOP package)
RoHS 状态 — [DATA_NEEDED: RoHS status]
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]

数据手册与资源

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