M29W400FT55N3E vs M29W400FB55N3F Comparación
Comparación detallada lado a lado de M29W400FT55N3E por Micron Technology y M29W400FB55N3F por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29W400FT55N3E | M29W400FB55N3F |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,80 | $2,55 |
| Tipo de memoria | Flash - NOR Memory IC | NOR Flash |
| Tamaño de memoria | 4 Mbit | 4 Mbit |
| Interfaz | Parallel | Parallel (asynchronous) |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V (program, erase and read) | 2.7 V to 3.6 V |
| Sector Size | 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block) | — |
| Boot Block Position | Top (FT suffix) | — |
| Temperatura de funcionamiento | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Temperature Grade | Automotive | — |
| Encapsulado | 48-TSOP I | 48-pin TSOP I (12 x 20 mm) |
| Number of Terminals | 48 | — |
| Package Code / Shape | TSSOP / Rectangular | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel de sensibilidad a la humedad (MSL) | 3 (168 Hours) | — |
| Packaging | Tray | Tape & Reel (TR) |
| Peak Reflow Time | 30 s max | — |
| Companion Access-Time Grade | 55 ns and 70 ns versions available in family | — |
| Organización de memoria | — | 512K x8 / 256K x16 |
| Program/Erase Supply | — | Single 2.7 V to 3.6 V |
| Byte/Word Select | — | BYTE# pin |
| Block Architecture | — | Boot block with hardware sector protection |
| Program Suspend/Erase Suspend | — | Supported |
| Lead-Free / RoHS | — | Yes (F suffix = lead-free RoHS-compliant) |
| Endurance | — | [DATA_NEEDED: program/erase cycles per block] |
| Data Retention | — | [DATA_NEEDED: retention years] |