M29W400FT55N3E vs M29W400FB55N3F 对比

详细并排对比 M29W400FT55N3E 出自 Micron Technology 和 M29W400FB55N3F 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W400FT55N3E M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E ✓ 量产中
Micron Technology
M29W400FB55N3F M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F ✓ 量产中

规格对比

参数 M29W400FT55N3E M29W400FB55N3F
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.80 $2.55
存储器类型 Flash - NOR Memory IC NOR Flash
存储容量 4 Mbit 4 Mbit
接口 Parallel Parallel (asynchronous)
Access Time 55 ns 55 ns
Supply Voltage (VCC) 2.7 V to 3.6 V (program, erase and read) 2.7 V to 3.6 V
Sector Size 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block) —
Boot Block Position Top (FT suffix) —
工作温度 -40C to +125C [DATA_NEEDED: operating temperature range]
Temperature Grade Automotive —
封装 48-TSOP I 48-pin TSOP I (12 x 20 mm)
Number of Terminals 48 —
Package Code / Shape TSSOP / Rectangular —
安装类型 Surface Mount Surface Mount
湿敏等级(MSL) 3 (168 Hours) —
Packaging Tray Tape & Reel (TR)
Peak Reflow Time 30 s max —
Companion Access-Time Grade 55 ns and 70 ns versions available in family —
存储组织 — 512K x8 / 256K x16
Program/Erase Supply — Single 2.7 V to 3.6 V
Byte/Word Select — BYTE# pin
Block Architecture — Boot block with hardware sector protection
Program Suspend/Erase Suspend — Supported
Lead-Free / RoHS — Yes (F suffix = lead-free RoHS-compliant)
Endurance — [DATA_NEEDED: program/erase cycles per block]
Data Retention — [DATA_NEEDED: retention years]

数据手册与资源

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