MPX2010D vs MPX2010GP Comparación
Comparación detallada lado a lado de MPX2010D por STMicroelectronics y MPX2010GP por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
MPX2010D - 10kPa Differential Pressure Sensor | STMicroelectronics
MPX2010D ✓ ActivoSTMicroelectronics
MPX2010GP - 10 kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPX2010GP ✓ ActivoComparación de especificaciones
| Parámetro | MPX2010D | MPX2010GP |
|---|---|---|
| Marca | STMicroelectronics | STMicroelectronics |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,10 | $7,20 |
| Pressure Type | Differential (Port 1 vs Port 2) | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | — |
| Tipo de salida | Analog Wheatstone Bridge (mV) | — |
| Output Voltage Span | 0 mV to 25 mV at 10V excitation | — |
| Sensitivity | 2.5 mV/kPa (nominal, at 10V excitation) | — |
| Excitation Voltage | 10 V (typical), 16 V (maximum) | — |
| Linearity | 0.1% of full-scale (typical) | [DATA_NEEDED: linearity %FS] |
| Rango de temperatura de funcionamiento | 0 C to +85 C | -40 C to +125 C |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | -40 C to +125 C |
| Encapsulado / Carcasa | 4-SIP Module (Case 344-15) | 4-SIP Module (Case 344B-01) |
| Tipo de montaje | Through-Hole | Through-Hole (SIP) |
| Número de pines | 4 | — |
| On-Chip Temperature Compensation | Yes (laser trimmed) | — |
| Bridge Configuration | 4-arm piezoresistive Wheatstone | — |
| Estado RoHS | [DATA_NEEDED: RoHS status from ST datasheet] | Compliant |
| Sensor Family | MPX2010 / MPXV2010G / MPXM2010 | — |
| Diaphragm Type | Single monolithic silicon | — |
| Maximum Overload Pressure | — | [DATA_NEEDED: maximum overload pressure] |
| Sensitivity (Full-Scale Span) | — | 25 mV typical at 10 V excitation |
| Rango de tensión de salida | — | 0 mV to 25 mV (10 V supply) |
| Offset (Zero Pressure) | — | 0 mV nominal |
| Supply Voltage (Excitation) | — | 10 V DC typical (max per datasheet) |
| Corriente de alimentación | — | 6 mA DC typical |
| Response Time | — | 1 ms typical |
| Temperature Compensation | — | On-chip, calibrated |
| Port Style | — | Male, 0.19 inch (4.93 mm) tube, vented gauge |
| Media Compatibility | — | Dry gases (silicone gel isolation) |