MPX2010D vs MPX2010GP Comparaison
Comparaison détaillée côte à côte de MPX2010D par STMicroelectronics et MPX2010GP par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
STMicroelectronics
MPX2010D - 10kPa Differential Pressure Sensor | STMicroelectronics
MPX2010D ✓ ActifSTMicroelectronics
MPX2010GP - 10 kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPX2010GP ✓ ActifComparaison des spécifications
| Paramètre | MPX2010D | MPX2010GP |
|---|---|---|
| Marque | STMicroelectronics | STMicroelectronics |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $9,10 | $7,20 |
| Pressure Type | Differential (Port 1 vs Port 2) | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | — |
| Type de sortie | Analog Wheatstone Bridge (mV) | — |
| Output Voltage Span | 0 mV to 25 mV at 10V excitation | — |
| Sensitivity | 2.5 mV/kPa (nominal, at 10V excitation) | — |
| Excitation Voltage | 10 V (typical), 16 V (maximum) | — |
| Linearity | 0.1% of full-scale (typical) | [DATA_NEEDED: linearity %FS] |
| Plage de température de fonctionnement | 0 C to +85 C | -40 C to +125 C |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | -40 C to +125 C |
| Boîtier / Format | 4-SIP Module (Case 344-15) | 4-SIP Module (Case 344B-01) |
| Type de montage | Through-Hole | Through-Hole (SIP) |
| Nombre de broches | 4 | — |
| On-Chip Temperature Compensation | Yes (laser trimmed) | — |
| Bridge Configuration | 4-arm piezoresistive Wheatstone | — |
| Statut RoHS | [DATA_NEEDED: RoHS status from ST datasheet] | Compliant |
| Sensor Family | MPX2010 / MPXV2010G / MPXM2010 | — |
| Diaphragm Type | Single monolithic silicon | — |
| Maximum Overload Pressure | — | [DATA_NEEDED: maximum overload pressure] |
| Sensitivity (Full-Scale Span) | — | 25 mV typical at 10 V excitation |
| Plage de tension de sortie | — | 0 mV to 25 mV (10 V supply) |
| Offset (Zero Pressure) | — | 0 mV nominal |
| Supply Voltage (Excitation) | — | 10 V DC typical (max per datasheet) |
| Courant d'alimentation | — | 6 mA DC typical |
| Response Time | — | 1 ms typical |
| Temperature Compensation | — | On-chip, calibrated |
| Port Style | — | Male, 0.19 inch (4.93 mm) tube, vented gauge |
| Media Compatibility | — | Dry gases (silicone gel isolation) |