MPX5010D vs MPX5010DP Comparación
Comparación detallada lado a lado de MPX5010D por NXP Semiconductors y MPX5010DP por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MPX5010D - 10kPa Differential Pressure Sensor | NXP Semiconductors
MPX5010D ✓ ActivoComparación de especificaciones
| Parámetro | MPX5010D | MPX5010DP |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $8,25 | $9,60 |
| Manufacturer | NXP Semiconductors | — |
| Pressure Type | Differential | Differential |
| Operating Pressure | 1.45 PSI (10 kPa) max | — |
| Tipo de salida | Analog Voltage | Analog, ratiometric |
| Rango de tensión de salida | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| Tensión de alimentación | 4.75 V to 5.25 V | 4.75 V to 5.25 V (5 V typical) |
| Port Size | Dual axial port (Differential) | — |
| Accuracy | [DATA_NEEDED: %FS] | — |
| Temperatura de funcionamiento | 0C to +85C (industrial-grade derivative supported to 40C to +125C) | 0 C to +85 C (compensated) |
| Encapsulado / Carcasa | 6-SIP Module (Case 867-08) | — |
| Tipo de montaje | Through-hole module | Through-hole (SIP) |
| Sensor Technology | Piezoresistive MEMS | — |
| Signal Conditioning | On-chip, temperature compensated and calibrated | — |
| Corriente de alimentación | [DATA_NEEDED: mA] | [DATA_NEEDED: supply current mA] |
| Response Time | [DATA_NEEDED: ms] | — |
| Estado RoHS | [DATA_NEEDED: verified per datasheet] | Compliant |
| Media Compatibility | Dry non-corrosive gases (air-referenced diaphragm) | — |
| Operating Pressure Range | — | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Maximum Overload Pressure | — | [DATA_NEEDED: max overload kPa] |
| Sensitivity | — | 450 mV/kPa (typical) |
| Linearity | — | ±1.5% VFSS (typical, 0-85 C) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature C] |
| Port Configuration | — | Dual axial ports, 4.93 mm (0.19 in) tube |
| Encapsulado | — | 6-SIP Module |
| Technology | — | Piezoresistive, monolithic silicon, on-chip signal conditioned |