MPX5010D vs MPX5010DP 对比
详细并排对比 MPX5010D 出自 NXP Semiconductors 和 MPX5010DP 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MPX5010D - 10kPa Differential Pressure Sensor | NXP Semiconductors
MPX5010D ✓ 量产中规格对比
| 参数 | MPX5010D | MPX5010DP |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | Pressure Sensors | Pressure Sensors |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.25 | $9.60 |
| Manufacturer | NXP Semiconductors | — |
| Pressure Type | Differential | Differential |
| Operating Pressure | 1.45 PSI (10 kPa) max | — |
| 输出类型 | Analog Voltage | Analog, ratiometric |
| 输出电压范围 | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| 电源电压 | 4.75 V to 5.25 V | 4.75 V to 5.25 V (5 V typical) |
| Port Size | Dual axial port (Differential) | — |
| Accuracy | [DATA_NEEDED: %FS] | — |
| 工作温度 | 0C to +85C (industrial-grade derivative supported to 40C to +125C) | 0 C to +85 C (compensated) |
| 封装 / 外壳 | 6-SIP Module (Case 867-08) | — |
| 安装类型 | Through-hole module | Through-hole (SIP) |
| Sensor Technology | Piezoresistive MEMS | — |
| Signal Conditioning | On-chip, temperature compensated and calibrated | — |
| 电源电流 | [DATA_NEEDED: mA] | [DATA_NEEDED: supply current mA] |
| Response Time | [DATA_NEEDED: ms] | — |
| RoHS 状态 | [DATA_NEEDED: verified per datasheet] | Compliant |
| Media Compatibility | Dry non-corrosive gases (air-referenced diaphragm) | — |
| Operating Pressure Range | — | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Maximum Overload Pressure | — | [DATA_NEEDED: max overload kPa] |
| Sensitivity | — | 450 mV/kPa (typical) |
| Linearity | — | ±1.5% VFSS (typical, 0-85 C) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature C] |
| Port Configuration | — | Dual axial ports, 4.93 mm (0.19 in) tube |
| 封装 | — | 6-SIP Module |
| Technology | — | Piezoresistive, monolithic silicon, on-chip signal conditioned |