MPX5010D vs MPX5010DP 비교
다음의 상세 나란히 비교: MPX5010D 제조: NXP Semiconductors 및 MPX5010DP 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MPX5010D | MPX5010DP |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | Pressure Sensors | Pressure Sensors |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $8.25 | $9.60 |
| Manufacturer | NXP Semiconductors | — |
| Pressure Type | Differential | Differential |
| Operating Pressure | 1.45 PSI (10 kPa) max | — |
| 출력 유형 | Analog Voltage | Analog, ratiometric |
| 출력 전압 범위 | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| 공급 전압 | 4.75 V to 5.25 V | 4.75 V to 5.25 V (5 V typical) |
| Port Size | Dual axial port (Differential) | — |
| Accuracy | [DATA_NEEDED: %FS] | — |
| 동작 온도 | 0C to +85C (industrial-grade derivative supported to 40C to +125C) | 0 C to +85 C (compensated) |
| 패키지 / 케이스 | 6-SIP Module (Case 867-08) | — |
| 실장 유형 | Through-hole module | Through-hole (SIP) |
| Sensor Technology | Piezoresistive MEMS | — |
| Signal Conditioning | On-chip, temperature compensated and calibrated | — |
| 공급 전류 | [DATA_NEEDED: mA] | [DATA_NEEDED: supply current mA] |
| Response Time | [DATA_NEEDED: ms] | — |
| RoHS 상태 | [DATA_NEEDED: verified per datasheet] | Compliant |
| Media Compatibility | Dry non-corrosive gases (air-referenced diaphragm) | — |
| Operating Pressure Range | — | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Maximum Overload Pressure | — | [DATA_NEEDED: max overload kPa] |
| Sensitivity | — | 450 mV/kPa (typical) |
| Linearity | — | ±1.5% VFSS (typical, 0-85 C) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature C] |
| Port Configuration | — | Dual axial ports, 4.93 mm (0.19 in) tube |
| 패키지 | — | 6-SIP Module |
| Technology | — | Piezoresistive, monolithic silicon, on-chip signal conditioned |