MRF5S19060MBR1 vs MRF5S19060MR1 Comparación

Comparación detallada lado a lado de MRF5S19060MBR1 por NXP Semiconductors y MRF5S19060MR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MRF5S19060MBR1 MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 Obsolete
NXP Semiconductors
MRF5S19060MR1 MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP

MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP

MRF5S19060MR1 ✓ Activo

Comparación de especificaciones

Parámetro MRF5S19060MBR1 MRF5S19060MR1
Marca NXP Semiconductors NXP Semiconductors
Categoría RF Amplifiers MOSFETs
Estado del ciclo de vida Obsolete Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $16,40 $25,60
Tipo de transistor LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel LDMOS RF Power MOSFET
Technology RF Power Field Effect Transistor —
Frequency Band 1.93 GHz to 1.99 GHz —
Typical Operating Frequency 1990 MHz —
Drain-Source Voltage (Rated) 65 V —
Nominal Drain Operating Voltage 28 V —
Output Power (Average) 12 W —
Power Gain 14 dB —
Test Current (Drain) 750 mA —
Drain Current Rating (Leakage Spec) 10 uA —
VSWR Tolerance 5:1 @ 28 Vdc, 1990 MHz, 12 W avg —
Input Matching Internally matched —
ESD Protection Integrated —
Encapsulado TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4) TO-270 WB-4 (Ceramic)
Package Outline Case 1486-03, Style 1 —
Estilo de montaje Flange / surface mount with thermal pad —
Maximum Junction Temperature 200 degree C —
Packaging Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix) —
Target Application PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage —
Manufacturer — NXP (formerly Freescale Semiconductor)
Part Number — MRF5S19060MR1
Frequency Range — 1930 MHz to 1990 MHz
Drain-Source Voltage (Vdss) — 65 V (max)
Drain Current (Id) — 750 mA
Output Power (Pout, avg) — 12 W (N-CDMA)
Output Power (Pout, PEP) — 60 W (typical)
Power Gain (Gps) — 14 dB (typical)
Drain Efficiency (etaD) — 45% (typical)
Operating Voltage — 28 V
Tipo de montaje — Surface Mount / Flange Mount
Test Signal — 2 x N-CDMA
Nivel MSL — [DATA_NEEDED: MSL rating]
Estado RoHS — [DATA_NEEDED: RoHS status]
Operating Class — Class AB

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