MRF5S19060MBR1 vs MRF5S19060MR1 Vergleich
Detaillierter Direktvergleich von MRF5S19060MBR1 von NXP Semiconductors und MRF5S19060MR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale
MRF5S19060MBR1 ObsoleteNXP Semiconductors
MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP
MRF5S19060MR1 ✓ AktivSpezifikationsvergleich
| Parameter | MRF5S19060MBR1 | MRF5S19060MR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | RF Amplifiers | MOSFETs |
| Lebenszyklusstatus | Obsolete | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $16,40 | $25,60 |
| Transistortyp | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel LDMOS RF Power MOSFET |
| Technology | RF Power Field Effect Transistor | — |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Typical Operating Frequency | 1990 MHz | — |
| Drain-Source Voltage (Rated) | 65 V | — |
| Nominal Drain Operating Voltage | 28 V | — |
| Output Power (Average) | 12 W | — |
| Power Gain | 14 dB | — |
| Test Current (Drain) | 750 mA | — |
| Drain Current Rating (Leakage Spec) | 10 uA | — |
| VSWR Tolerance | 5:1 @ 28 Vdc, 1990 MHz, 12 W avg | — |
| Input Matching | Internally matched | — |
| ESD Protection | Integrated | — |
| Gehäuse | TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4) | TO-270 WB-4 (Ceramic) |
| Package Outline | Case 1486-03, Style 1 | — |
| Montagestil | Flange / surface mount with thermal pad | — |
| Maximum Junction Temperature | 200 degree C | — |
| Packaging | Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix) | — |
| Target Application | PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage | — |
| Manufacturer | — | NXP (formerly Freescale Semiconductor) |
| Part Number | — | MRF5S19060MR1 |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Drain-Source Voltage (Vdss) | — | 65 V (max) |
| Drain Current (Id) | — | 750 mA |
| Output Power (Pout, avg) | — | 12 W (N-CDMA) |
| Output Power (Pout, PEP) | — | 60 W (typical) |
| Power Gain (Gps) | — | 14 dB (typical) |
| Drain Efficiency (etaD) | — | 45% (typical) |
| Operating Voltage | — | 28 V |
| Montageart | — | Surface Mount / Flange Mount |
| Test Signal | — | 2 x N-CDMA |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| RoHS-Status | — | [DATA_NEEDED: RoHS status] |
| Operating Class | — | Class AB |