MRF5S19060MBR1 vs MRF5S19060MR1 Comparação

Comparação detalhada lado a lado de MRF5S19060MBR1 por NXP Semiconductors e MRF5S19060MR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF5S19060MBR1 MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 Obsolete
NXP Semiconductors
MRF5S19060MR1 MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP

MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP

MRF5S19060MR1 ✓ Ativo

Comparação de especificações

Parâmetro MRF5S19060MBR1 MRF5S19060MR1
Marca NXP Semiconductors NXP Semiconductors
Categoria RF Amplifiers MOSFETs
Status do ciclo de vida Obsolete Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $16,40 $25,60
Tipo de transistor LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel LDMOS RF Power MOSFET
Technology RF Power Field Effect Transistor —
Frequency Band 1.93 GHz to 1.99 GHz —
Typical Operating Frequency 1990 MHz —
Drain-Source Voltage (Rated) 65 V —
Nominal Drain Operating Voltage 28 V —
Output Power (Average) 12 W —
Power Gain 14 dB —
Test Current (Drain) 750 mA —
Drain Current Rating (Leakage Spec) 10 uA —
VSWR Tolerance 5:1 @ 28 Vdc, 1990 MHz, 12 W avg —
Input Matching Internally matched —
ESD Protection Integrated —
Encapsulamento TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4) TO-270 WB-4 (Ceramic)
Package Outline Case 1486-03, Style 1 —
Estilo de montagem Flange / surface mount with thermal pad —
Maximum Junction Temperature 200 degree C —
Packaging Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix) —
Target Application PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage —
Manufacturer — NXP (formerly Freescale Semiconductor)
Part Number — MRF5S19060MR1
Frequency Range — 1930 MHz to 1990 MHz
Drain-Source Voltage (Vdss) — 65 V (max)
Drain Current (Id) — 750 mA
Output Power (Pout, avg) — 12 W (N-CDMA)
Output Power (Pout, PEP) — 60 W (typical)
Power Gain (Gps) — 14 dB (typical)
Drain Efficiency (etaD) — 45% (typical)
Operating Voltage — 28 V
Tipo de montagem — Surface Mount / Flange Mount
Test Signal — 2 x N-CDMA
Nível MSL — [DATA_NEEDED: MSL rating]
Status RoHS — [DATA_NEEDED: RoHS status]
Operating Class — Class AB

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